DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement- Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
RoHS COMPLIANCE
• RA55H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.

描述

該RA55H3340M是55-watt RF的MOSFET放大器模塊12.5-volt移動(dòng)電臺(tái)在向工作在330-400-MHz范圍.

電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒(méi)有門(mén)電壓(VGG進(jìn)入=0V),只有一小漏電流

漏極和RF衰減輸入信號(hào)的*高60 dB.輸出功率和漏電流增加門(mén)極電壓增加.與周?chē)?V柵極電壓（*?。?，

輸出功率和漏電流大幅增加.標(biāo)稱輸出功率變?cè)?.5V（典型值），5V可用（*大）.在VGG=5V,的典型柵極電流1 mA.

該模塊是專為非線性調(diào)頻調(diào)制，但也可能是線性調(diào)制使用設(shè)置排水靜態(tài)電流與柵極電壓和控制輸出功率與輸入功率.

特征

•增強(qiáng)型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)

• Pout>55W,ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW

•寬帶頻率范圍：330-400MHz

•低功耗控制電流IGG=1mA (typ)在VGG=5V

•模塊尺寸：66 x 21 x 9.88 mm

•線性操作有可能通過(guò)設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制與輸入功率

北京京瑞馨科技--供應(yīng)全新原裝正品射頻模塊、射頻管！假一罰十?。?！
聯(lián)系人：何先生      
聯(lián)系電話：182-1045-0337 、010-52459918    010-6492 0890
QQ：5155-2801 

網(wǎng)址：www.jrx-tech.com

全新原裝正品供應(yīng)： 

三菱（MITSUBISHI）:（HF/VHF/UHF/900MHz（分立MOSFET） 

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RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、
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東芝（TOSHIBA）： 
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恩智浦（NXP）



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MRF173(80W)、DU2880U(80W)、MRF171A（45W）、
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ST：

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